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reverse recovery current

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  • Current injection technique — The current injection technique is a technique developed to reduce the turn OFF switching transient of power bipolar semiconductor devices. It was developed and published by Dr S. Eio of Staffordshire University (United Kingdom) in 2007.… …   Wikipedia

  • Reverse engineering — is the process of discovering the technological principles of a device, object, or system through analysis of its structure, function, and operation. It often involves taking something (e.g., a mechanical device, electronic component, software… …   Wikipedia

  • Step recovery diode — In electronics, a Step recovery diode (SRD) is a semiconductor junction diode having the ability to generate extremely short pulses. It is also called Snap off diode or charge storage diode or memory varactor, and has a variety of uses in… …   Wikipedia

  • M88 Recovery Vehicle — Infobox Weapon name=M88 caption=An original baseline M88 ( Bergepanzer 1 ) ARV of the German Army on static display at the Panzermuseum Munster, Germany. origin= USA type= Armored Recovery Vehicle is vehicle=yes service= 1961–present used by= See …   Wikipedia

  • National Industrial Recovery Act — Front page of the National Industrial Recovery Act, as signed by President Franklin D. Roosevelt on June 16, 1933. The National Industrial Recovery Act (NIRA), officially known as the Act of June 16, 1933 (Ch. 90, 48 Stat. 195, formerly codified… …   Wikipedia

  • Alternating current — (green curve). The horizontal axis measures time; the vertical, current or voltage. In alternating current (AC, also ac) the movement of electric charge periodically reverses direction. In direct current (DC, also dc), the flow of electric charge …   Wikipedia

  • Heat recovery ventilation — (also known as a heat exchanger, air exchanger or air to air exchanger) is a ventilation system that employs a counter flow heat exchanger between the inbound and outbound air flow. HRV provide fresh air and improved climate control, while also… …   Wikipedia

  • ГОСТ 20332-84: Тиристоры. Термины, определения и буквенные обозначения параметров — Терминология ГОСТ 20332 84: Тиристоры. Термины, определения и буквенные обозначения параметров оригинал документа: 110. Время включения тиристора E. Turn on time F. Temps d’amorcage tувкл, tвкл Интервал времени, в течение которого тиристор… …   Словарь-справочник терминов нормативно-технической документации

  • Schottky diode — The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action.In the early days of wireless, cat s whisker detectors …   Wikipedia

  • время — 3.3.4 время tE (time tE): время нагрева начальным пусковым переменным током IА обмотки ротора или статора от температуры, достигаемой в номинальном режиме работы, до допустимой температуры при максимальной температуре окружающей среды. Источник …   Словарь-справочник терминов нормативно-технической документации

  • Thyristor — The thyristor is a solid state semiconductor device with four layers of alternating N and P type material. They act as bistable switches, conducting when their gate receives a current pulse, and continue to conduct for as long as they are forward …   Wikipedia

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